Coulomb drag as a measure of trigonal warping in doped graphene

I suggest to use the effect of Coulomb drag between two closely positioned graphite monolayers (graphene sheets) for experimental measurement of the strength of weak non-linearities of the spectrum in graphene. I consider trigonal warping as a representative mechanism responsible for the drag effect. Since graphene is relatively defect-free, I evaluate the drag conductivity in the ballistic regime and find that it is proportional to the fourth power of the warping strength.Comment: 4 pages, 1 figur

Spin Hall Drag

We predict a new effect in electronic bilayers: the {\it Spin Hall Drag}. The effect consists in the generation of spin accumulation across one layer by an electric current along the other layer. It arises from the combined action of spin-orbit and Coulomb interactions. Our theoretical analysis, based on the Boltzmann equation formalism, identifies two main contributions to the spin Hall drag resistivity: the side-jump contribution, which dominates at low temperature, going as $T^2$, and the skew-scattering contribution, which is proportional to $T^3$. The induced spin accumulation is large enough to be detected in optical rotation experiments.Comment: 5 pages, 2 figure

Van der Waals Frictional Drag induced by Liquid Flow in Low- Dimensional Systems

We study the van der Waals frictional drag force induced by liquid flow in low-dimensional systems (2D and 1D electron systems, and 2D and 1D channels with liquid). We find that for both 1D and 2D systems, the frictional drag force induced by liquid flow may be several orders of magnitude larger than the frictional drag induced by electronic current.Comment: 10 pages, 4 figure

Magnon Mediated Electric Current Drag Across a Ferromagnetic Insulator Layer

In a semiconductor hererostructure, the Coulomb interaction is responsible for the electric current drag between two 2D electron gases across an electron impenetrable insulator. For two metallic layers separated by a ferromagnetic insulator (FI) layer, the electric current drag can be mediated by a nonequilibrium magnon current of the FI. We determine the drag current by using the semiclassical Boltzmann approach with proper boundary conditions of electrons and magnons at the metal-FI interface.Comment: 13 pages, 2 figures: to appear in PR

Effective Drag Between Strongly Inhomogeneous Layers: Exact Results and Applications

We generalize Dykhne's calculation of the effective resistance of a 2D two-component medium to the case of frictional drag between the two parallel two-component layers. The resulting exact expression for the effective transresistance, $\rho^D_{eff}$, is analyzed in the limits when the resistances and transresistances of the constituting components are strongly different - situation generic for the vicinity of the {\em classical} (percolative) metal-insulator transition (MIT). On the basis of this analysis we conclude that the evolution of $\rho^D_{eff}$ across the MIT is determined by the type of correlation between the components, constituting the 2D layers. Depending on this correlation, in the case of two electron layers, $\rho^D_{eff}$ changes either monotonically or exhibits a sharp maximum. For electron-hole layers $\rho^D_{eff}$ is negative and $|\rho^D_{eff}|$ exhibits a sharp minimum at the MIT.Comment: 7 pages, 3 figure

On Coulomb drag in double layer systems

We argue, for a wide class of systems including graphene, that in the low temperature, high density, large separation and strong screening limits the drag resistivity behaves as d^{-4}, where d is the separation between the two layers. The results are independent of the energy dispersion relation, the dependence on momentum of the transport time, and the wave function structure factors. We discuss how a correct treatment of the electron-electron interactions in an inhomogeneous dielectric background changes the theoretical analysis of the experimental drag results of Ref. [1]. We find that a quantitative understanding of the available experimental data [1] for drag in graphene is lacking.Comment: http://iopscience.iop.org/0953-8984/24/33/335602

Can Hall drag be observed in Coulomb coupled quantum wells in a magnetic field?

We study the transresistivity \tensor\rho_{21} (or equivalently, the drag rate) of two Coulomb-coupled quantum wells in the presence of a perpendicular magnetic field, using semi-classical transport theory. Elementary arguments seem to preclude any possibility of observation of ``Hall drag'' (i.e., a non-zero off-diagonal component in \tensor\rho_{21}). We show that these arguments are specious, and in fact Hall drag can be observed at sufficiently high temperatures when the {\sl intra}layer transport time $\tau$ has significant energy-dependence around the Fermi energy $\varepsilon_F$. The ratio of the Hall to longitudinal transresistivities goes as $T^2 B s$, where $T$ is the temperature, $B$ is the magnetic field, and $s = [\partial\tau/ \partial\varepsilon] (\varepsilon_F)$.Comment: LaTeX, 13 pages, 2 figures (to be published in Physica Scripta, Proc. of the 17th Nordic Semiconductor Conference

Coulomb drag between quantum wires with different electron densities

We study the way back-scattering electron--electron interaction generates Coulomb drag between quantum wires with different densities. At low temperature $T$ the system can undergo a commensurate-- incommensurate transition as the potential difference $|W|$ between the two wires passes a critical value $\Delta$, and this transition is reflected in a marked change in the dependence of drag resistivity on $W$ and $T$. At high temperature a density difference between the wires suppresses Coulomb drag induced by back scattering, and we use the Tomonaga--Luttinger model to study this suppression in detail.Comment: 6 pages, 4 figure

Coulomb Drag for Strongly Localized Electrons: Pumping Mechanism

The mutual influence of two layers with strongly loclized electrons is exercised through the random Coulomb shifts of site energies in one layer caused by electron hops in the other layer. We trace how these shifts give rise to a voltage drop in the passive layer, when a current is passed through the active layer. We find that the microscopic origin of drag lies in the time correlations of the occupation numbers of the sites involved in a hop. These correlations are neglected within the conventional Miller-Abrahams scheme for calculating the hopping resistance.Comment: 5 pages, 3 figure

Intershell resistance in multiwall carbon nanotubes: A Coulomb drag study

We calculate the intershell resistance R_{21} in a multiwall carbon nanotube as a function of temperature T and Fermi level (e.g. a gate voltage), varying the chirality of the inner and outer tubes. This is done in a so-called Coulomb drag setup, where a current I_1 in one shell induces a voltage drop V_2 in another shell by the screened Coulomb interaction between the shells neglecting the intershell tunnelling. We provide benchmark results for R_{21}=V_2/I_1 within the Fermi liquid theory using Boltzmann equations. The band structure gives rise to strongly chirality dependent suppression effects for the Coulomb drag between different tubes due to selection rules combined with mismatching of wave vector and crystal angular momentum conservation near the Fermi level. This gives rise to orders of magnitude changes in R_{21} and even the sign of R_{21} can change depending on the chirality of the inner and outer tube and misalignment of inner and outer tube Fermi levels. However for any tube combination, we predict a dip (or peak) in R_{21} as a function of gate voltage, since R_{21} vanishes at the electron-hole symmetry point. As a byproduct, we classified all metallic tubes into either zigzag-like or armchair-like, which have two different non-zero crystal angular momenta m_a, m_b and only zero angular momentum, respectively.Comment: 17 pages, 10 figure